As a Principal Design Engineer in our (NVE) Non-Volatile Memory Engineering Group at Micron Technology, Inc., you will be responsible for crafting and analyzing digital circuits used in the development of next generation 3D NAND products! This includes developing architectures, designing in RTL, synthesizing, APR, closing timing, simulating, optimizing 3D NAND circuits. In this position you will work closely with design teams both domestic and overseas to actively design products that meet all customer functions and assure the best cost, quality, reliability, time-to-market, and customer happiness!

Responsibilities will include, but are not limited to:

• Contribute to new Memory based product opportunities by assisting with the overall design, layout, and optimization of Memory/Logic circuits

• Responsible to translate system level specs onto the circuit block level performance spec, circuit architecture, design and development

• Perform verification processes with modeling and simulation using industry standard simulators

• Document and review final results

• Chip in to cross group communication to work towards standardization and group success

• Actively solicit guidance from Standards, CAD, modeling, and verification groups to ensure the design quality

Successful candidates for this position will have:

• A Bachelor's or Master's degree (Preferred) in Electrical Engineering, Computer Engineering, or related discipline

• Proven knowledge of CMOS Circuit Design

• Experience in RTL design, design synthesis, static timing analysis, and automated layout techniques

• Hands-on experience with verilog modeling and simulation tools

• Knowledge of state machine logic/design verification techniques

• Excellent problem-solving and analytical skills

• Experience with a scripting language (Python, Tcl, Perl, etc) See Less